Bine aţi venit la Institutul de Inginerie Electronica şi Nanotehnologii “D. Ghiţu”

Laboratorul Nanotehnologii

Şeful Laboratorului- RUSU Emil, doctor habilitat în ştiinţe tehnice, conferenţiar cercetător

Telefon: +373 (22) 73 90 48

Fax: + 373 (22) 28 82 39

Email: rusue@nano.asm.md

Direcţiile principale de activitate ştiinţifică ale Laboratorului:

  • Elaborarea tehnologiilor de fabricare a nanopeliculelor şi templatelor semiconductoare de suprafaţă mare cu morfologie şi proprietăţi optice şi electrice prestabilite.
  • Elaborarea tehnologiilor de fabricare a materialelor compozite în baza templatelor semiconductoare şi dielectrice, micro- şi nanofirelor semiconductoare şi semimetalice.                                                                                 
  • Caracterizarea optică, electrică şi morfologică a filmelor nanostructurate şi structurilor nanodimensionale.
  • Implementarea templatelor, materialelor compozite şi nanostructurate în dispozitive electronice, optoelectronice şi fotonice.

Componenţa Laboratorului:

  • Ghimpu Lidia, dr.,  c. ş. s. în fizică, tel: + 373 (22) 28 83 80, email: ghimpu@nano.asm.md
  • Leporda Nicolae, dr., c. ş. c. în fizică, tel: + 373 (22) 28 82 39, email: nicul@nano.asm.md
  • Tighineanu Ion, acad. al AŞM, dr. hab., prof. univ., c. ş. p. în fizică, tel: + 373 (22) 27 40 47, email: tiginyanu@yahoo.com                             
  • Ursachi Veaceslav, dr. hab., conf. cercet., c. ş.p. în fizică, tel: + 373 (22) 54 28 24, email: ursaki@yahoo.com
  • Sirbu Lilian, dr., c. ş. s. în fizică, tel: + 373 (22) 28 82 39, email: sirbu_lilian@yahoo.de
  • Burlacu Alexandru, c. ş. în fizică, tel: + 373 (22) 28 82 39, email: alexandru.burlacu@asm.md
  •  Morari Vadim, c. ş. st. în fizică, tel: + 373 (22) 73 90 48, email: vadimmorari@mail.ru      
  • Pleşco Irina, c. ş. st. în fizică, tel: + 373 (22) 28 82 39, email: irinyplesco@gmail.com
  • Condur Nadejda, inginer tehnolog coordonator, tel: + 373 (22) 73 90 48
  • Piatîghin Serghei, montator şi reglor dispozitive şi aparate radioelelctronice
  • Ţarelungă Sergiu, reglor dispozitive şi aparate radioelelctronice

Publicaţii recente:

  1. 1.       MANJON, F. J.; TIGINYANU, I.; URSAKI, V. eds. Pressure-induced phase transitions in AB2X4 chalcogenide compounds. Eds. Berlin; Heidelberg: Springer-Verlag, 2014. Springer Series in Materials Science, Vol. 189. 341 p. ISBN 978-3-642-40366-8.
  2. 2.       GUC, M.; LISUNOV, K.G.; HAJDEU, E.; LEVCENKO, S.; URSAKI, V.; ARUSHANOV, E. Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals. Solar Energy Materials and Solar Cells. 2014, 127, pp. 87-91. doi:10.1016/j.solmat.2014.04.004. ISSN: 0927-0248. (IF: 5.03)
  3. 3.       LUPAN, O. ; CRETU, V.; DENG, M.; GEDAMU, D.; PAULOWICZ, I. ; KAPS, S.; MISHRA, Y. K.; POLONSKYI, O.; ZAMPONI, C.; KIENLE, L.; TROFIM, V.; TIGINYANU, I. ; ADELUNG, R. Versatile growth of freestanding orthorhombic α-molybdenum trioxide nano- and microstructures by rapid thermal processing for Gas nanosensors. J. Phys. Chem. C. 2014, 118, pp. 15068–15078. DOI:10.1021/jp5038415. ISSN: 1932-7447. (IF: 4.835)
  4. 4.       MONAICO, E.; TIGINYANU, I.; VOLCIUC, O.; MEHRTENS, T.; ROSENAUER, A.; GUTOWSKI, J.; NIELSCH, K. Formation of InP nanomembranes and nanowires under fast anodic etching of bulk substrates. Electrochem. Commun. 2014, 47,  pp. 29-32. doi:10.1016/j.elecom.2014.07.015. ISSN: 1388-2481. (IF 4.287)
  5. 5.       SANS, J.A.; SANTAMARIA-PEREZ, D.; POPESCU, C.; GOMIS, O.; MANJON, F.J.; VILAPLANA, R.; MUNOZ, A.; RODRIGUEZ-HERNANDEZ, P.; URSAKI, V.V.; TIGINYANU, I.M. Structural and vibrational properties of CdAl2S4 under high pressure: experimental and theoretical approach. J. Phys. Chem. C. 2014, 118(28), pp 15363–15374. DOI:10.1021/jp5037926.  ISSN: 1932-7447. (IF: 4.835)
  6. 6.       SANTAMARIA-PEREZ, D.; GOMIS, O.; PEREIRA, A.L.J.; VILAPLANA, R.; POPESCU, C.; SANS, J.A.; MANJON, F.J.; RODRIGUEZ-HERNANDEZ, P.;  MUNOZ, A.; URSAKI, V.V.; TIGINYANU, I.M. Structural and vibrational study of pseudocubic CdIn2Se4 under compression. J. Phys. Chem. C. 2014, 118(46), pp 26987–26999. DOI:10.1021/jp5077565. ISSN: 1932-7447. (IF 4.835)
  7. 7.       COLIBABA, ; MONAICO, E. V.; GONCEARENCO, E. P.; NEDEOGLO, D. D.; TIGINYANU,  I. M.; NIELSCH, K.  Growth of ZnCdS single crystals and prospects of their application as nanoporous structures. Semicond. Sci. Technol. 2014, 29(12), 125003(7pp). doi:10.1088/0268-1242/29/12/125003. ISSN: 1361-6641. (IF 2.206)
  8. 8.       GOMIS, O.; SANTAMARÍA-PÉREZ, D.; VILAPLANA, R.; LUNA, R.; SANS, J.A.; MANJÓN, F.J.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I.M.; URSAKI, V.V. Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure. Journal of Alloys and Compounds. 2014, 583, pp. 70-78. doi:10.1016/j.jallcom.2013.08.123. ISSN: 0925-8388. (IF: 2.726)
  9. 9.       GUTUL, T.; RUSU, E.; CONDUR, N.; URSAKI, V.; GONCEARENCO, E.; VLAZAN, P. Preparation of poly(N-vinylpyrrolidone)-stabilized ZnO colloid nanoparticles. Beilstein J. Nanotechnol. 2014, 5,pp. 402–406. doi:10.3762/bjnano.5.47. ISSN 2190-4286. (IF: 2.326)
  10. 10.   LUPAN, O.; TROFIM, V.; CRETU, V.; STAMOV, I.; SYRBU, N.N.; TIGINYANU, I.; MISHRA, Y. K. and   ADELUNG, R. Investigation of optical properties and electronic transitions in bulk and nano-microribbons of molybdenum trioxide. J. Phys. D: Appl. Phys. 2014, 47, 085302 (8pp). doi:10.1088/0022-3727/47/8/085302. ISSN: 1361-6463. (IF 2.521)
  11. 11.   PRISLOPSKI, S.YA.; TIGINYANU, I.M.; GHIMPU, L.; MONAICO, E.; SIRBU, L.; GAPONENKO, S.V. Retroreflection of light from nanoporous InP: correlation with high absorption. Applied Physics A Mater. 2014, 117(2), pp. 467-470. doi: 10.1007/s00339-014-8683-x. ISSN 0947-8396. (IF: 1.694)
  12. 12.   RADHANPURA, K.; LEWIS, R. A.; SIRBU, L.; ENACHI, M.; TIGINYANU, I. M.; SKURATOV, V. A.  Effect of heavy noble gas ion irradiation on terahertz emission efficiency of InP (100) and (111) crystal planes. Semicond. Sci. Technol. 2014, 29(9), 095015(5pp). doi:10.1088/0268-1242/29/9/095015. ISSN: 1361-6641. (IF: 2.206)
  13. 13.   VILAPLANA, R.;  GOMIS, O.;  MANJÓN, F. J.; ORTIZ, H. M.; PÉREZ-GONZÁLEZ, E.;  LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ERRANDONEA, D.; URSAKI, V.V.; AND  TIGINYANU, I. M.  Lattice dynamics study of HgGa2Se4 at high pressures. J. Phys. Chem.C. 2013, 117(30), 15773–15781. doi: 10.1021/jp402493r. ISSN 1932-7447. (IF: 4.814)
  14. 14.   VOLCIUC, O.; BRANISTE, T.; TIGINYANU, I.; STEVENS-KALCEFF, M.A.; EBELING, J.; ASCHENBRENNER,T.; HOMMEL, D.; URSAKI, V.; AND GUTOWSKI, J. The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes. Applied Physics Letters. 2013,103(24), 243113 (4pp). doi: 10.1063/1.4847735. ISSN 0003-6951. (IF: 3.794)
  15. 15.   ENACHI, M.; STEVENS-KALCEFF, MARION A.; SARUA, A.; URSAKI,V.; TIGINYANU,  I.  Design of titania nanotube structures by focused laser beam direct writing. Journal of Applied Physics. 2013, 114(23), 234302 (5pp). ISSN: 0021-8929. doi: 10.1063/1.4849836. (I.F. 2.21)
  16. 16.   GOMIS, O.; VILAPLANA, R.; MANJON, F. J. ; SANTAMARIA-PEREZ, D.; ERRANDONEA, D.; PEREZ-GONZALEZ, E.; LOPEZ-SOLANO, J.; RODRIGUEZ-HERNANDEZ, P.; MUNOZ, A.; TIGINYANU, I. M.AND URSAKI, V. V. Crystal structure of HgGa2Se4 under compression. Materials Research Bulletin. 2013, 48(6), 2128-2133. doi: 10.1016/j.materresbull.2013.02.037. ISSN: 0025-5408. (I.F. 1.913)
  17. 17.   GOMIS, O.; VILAPLANA, R.; MANJÓN, F.J.; SANTAMARÍA-PÉREZ, D.; ERRANDONEA, D.; PÉREZ-GONZÁLEZ, E.; LÓPEZ-SOLANO, J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I.M.; URSAKI, V.V.  High-pressure study of the structural and elastic properties of defect-chalcopyrite HgGa2Se4. Journal of Applied Physics. 2013, 113(7), 073510-073510-10. ISSN: 0021-8929. doi: 10.1063/1.4792495. (IF: 2.21)
  18. 18.   SERGENTU, V.; TIGINYANU, I.; URSAKI., V. Renormalization of the Coulomb law in anomalous electron transport with giant current density at room temperature. Romanian Reports in Physics. 2013, 65(3), 767–777. ISSN 1221-1451. (IF: 1.123)
  19. 19.   SERGENTU, V.; URSAKI V.;  SIRBU, L. Body zero frequency modes in photonic crystals of nanopores and nanocylinders. Phys. Status Solidi B, 2013, 250(10), 2215-2220. doi: 10.1002/pssb.201349065. ISSN 0370-1972. (IF: 1.489)
  20. 20.   STAMOV, I.G. ; SYRBU, N.N.; PARVAN, V.I.; ZALAMAI, V.V.; TIGINYANU, I.M. The band structure of birefractive CdGa2S4 crystals. Optics Communications. 2013, 309, 205–211. doi: 10.1016/j.optcom.2013.07.032. ISSN 0030-4018. (IF: 1.438)
  21. 21.   STEVENS-KALCEFF, M. A. ; TIGINYANU, I. M. ; POPA, V.; BRANISTE, T. and  BRENNER, P.  Cathodoluminescence characterization of suspended GaN nanomembranes. Journal of Applied Physics. 2013, 114(4), 043516 - 043516-12. doi: 10.1063/1.4816562. ISSN 0021-8979. (IF: 2.21)
  22. 22.   SYRBU, N.N.; STAMOV, I.G.; PARVAN, V.I.; ZALAMAI, V.V.; TIGINYANU, I.M. Excitonic spectra and band structureof CdGa2Se4 birefractive crystals.  Physica B: Condensed Matter, Vol. 429, pp. 106–114 (2013). doi: 10.1016/j.physb.2013.08.015. ISSN 0921-4526. (I.F. 1.327)
  23. 23.   VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L. ; URSAKI, V. V.; TIGINYANU, I. M.  High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4. Journal of Applied Physics 2013,113(23), 233501 (10pp.). ISSN: 0021-8979. doi: 10.1063/1.4810854. (IF: 2.210).
  24. 24.   VILAPLANA, R.; GOMIS, O.; PÉREZ-GONZÁLEZ, E.; ORTIZ, H. M.; MANJÓN, F. J.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; ALONSO-GUTIÉRREZ, P.; SANJUÁN, M. L.; URSAKI, V. V.; TIGINYANU, I. M. Thermally activated cation ordering in ZnGa2Se4 single crystals studied by Raman scattering, optical absorption, and ab initio calculations.  Journal of Physics: Condensed Matter. 2013, 25(16), 165802 (11pp.). ISSN: 0953-8984. doi:10.1088/0953-8984/25/16/165802. (IF: 2.355)
  25. 25.   VILAPLANA, R.; ROBLEDILLO, M.; GOMIS, O.; SANS, J. A.; MANJÓN, F. J. ; PÉREZ-GONZÁLEZ, E.; RODRÍGUEZ-HERNÁNDEZ, P.; MUÑOZ, A.; TIGINYANU, I. M. ; URSAKI, V. V. Vibrational study of HgGa2S4 under high pressure. Journal of Applied Physics. 2013, 113(9), 093512 (10pp.). ISSN: 0021-8979. doi: 10.1063/1.4794096. (IF: 2.210).