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Nonuniform superconductivity as the base for superconducting spintronics




Nonuniform superconductivity as the base for superconducting spintronics


Institutional Project (Supreme Council for Science and Technological Development)

Execution period:



Ghitu Institute of Electronic Engineering and Nanotechnologies, ASM

Project Leader:

Sidorenko Anatolie, m. corr. of ASM, dr. hab., prof.


Laboratory of Cryogenics


Superconductivity, functional nanostructures, nanomaterial engineering, microwires, spintronics, triplet spin valve


The project is directed towards elaboration of advanced technological processes of nanostructurization of metals and semimetals, detection and investigation of new physical phenomena, which appear due to the re-configuration at nanometric-scale properties of that materials: nonuniform superconductivity in form of  inverse proximity effect and triplet superconductivity in multilayered nanostructures superconductor/ ferromagnet/antiferromagnet (S/F/AF), surface states quantification in thin Bi wires and non-uniform superconductivity at the interfaces in the  bi- and tri- crystals of bismuth. Implementation of the magnetron sputtering technology, as  the method of fabrication of hybrid   S/F/AF nanostructures will garantee the high quality of the contact interfaces, that should give the possibility to appear of the inverse proximity effect and phenomena of triplet superconductivity. Investigation of the non-uniform superconducting states using the method of reflectometry of spin-polarized electrons will detect the thin-structure elements, evidencing the appearance of the the triplet superconductivity and the inverse proximity effect at the interfaces of S/F nanostructures. It will be developed fundamental principles of functionality of the novel devices for spintronics, will be analysed the possibility of implementation of the obtained results and fabricated nanostrictures in superconducting spintronics for design of memory elements, logic elements and switches of the „triplet spin-valve” type.