Ghitu IEEN Administration
Development of the manufacturing technique for wire micro- and nanocrystals based on semiconductors and semimetals and study of their magnetotransport properties under elastic strains to design strain and temperature sensing devices on their basis
|Title:||Development of the manufacturing technique for wire micro- and nanocrystals based on semiconductors and semimetals and study of their magnetotransport properties under elastic strains to design strain and temperature sensing devices on their basis|
|Programme:||Bilateral project Moldova - Ukraine|
|Institutions:||Ghitu Institute of Electronic Engineering and Nanotechnologies|
|Project Leader:||Nikolaeva Albina, dr. hab., associated professor (docent)|
|Participants:||Laboratory of Electronics of Low Dimensional Structures
The aim of this work is optimization and development of methods for the preparation of high-quality low-dimensional wires based on semiconductors (Si, Ge, Si-Ge) and semimetals (Bi) characterized by high strain-sensitive and thermoelectric properties, with a view to design the new-generation sensors of mechanical quantities and miniature thermoelectric energy converters on their basis.
As a result of project conducting it will be developed and optimized a reliable technology of Ge, Si, Si-Ge micro- and nanowires growth by chemical vapour deposition method, growth of regular array of silicon nanowires in open system as well as growth of Bi semimetal glass-coating wires by high press injection method and by the method of liquid phase casting. Methods of laser and zone recrystallization will be used for improvement of Bi wires structure.
Anisotropic elastic strain method will be used for realization of various electron topologic transitions revealing due to Shubnikov de Gaz oscillations in magnetic fields up to 14 T at 1,3–4,2К temperature range. Besides studies of strain influence on magnetothermoelectric and tenzometric properties of wires from Si, Ge, Si1-xGex semiconductors to Bi semimetals of various diameters and compositions will be conducted.
The investigations will allow to predict the parameters of sensitive elements and to create miniature and high sensitive sensors of mechanical and thermal values based on doped Si, Ge, Si1-хGeх and Bi wires operating in wide temperature range 4,2 – 300 К and magnetic fields up to 14 T at elastic strains up to 3% relative elongation.